? semiconductor components industries, llc, 2000 december, 2000 rev. 0 1 publication order number: ntgs3433t1/d ntgs3433t1 product preview mosfet -3.3 amps, -12 volts pchannel tsop6 features ? ultra low r ds(on) ? higher efficiency extending battery life ? miniature tsop6 surface mount package applications ? power management in portable and batterypowered products, i.e.: cellular and cordless telephones, and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted.) rating symbol value unit draintosource voltage v dss 12 volts gatetosource voltage continuous v gs 8.0 volts thermal resistance junctiontoambient (note 1.) total power dissipation @ t a = 25 c drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) maximum operating power dissipation maximum operating drain current r q ja p d i d i dm p d i d 62.5 2.0 3.3 20 1.0 2.35 c/w watts amps amps watts amps thermal resistance junctiontoambient (note 2.) total power dissipation @ t a = 25 c drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) maximum operating power dissipation maximum operating drain current r q ja p d i d i dm p d i d 128 1.0 2.35 14 0.5 1.65 c/w watts amps amps watts amps operating and storage temperature range t j , t stg 55 to 150 c maximum lead temperature for soldering purposes for 10 seconds t l 260 c 1. mounted onto a 2 square fr4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t 5.0 seconds. 2. mounted onto a 2 square fr4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 3.3 amperes 12 volts 75 m @ v gs = 4.5 v 3 4 1256 device package shipping ordering information ntgs3433t1 tsop6 3000 tape & reel pchannel tsop6 case 318g style 1 http://onsemi.com x marking diagram 433 x = date code pin assignment 3 2 1 4 gate drain source 6 5 4 1 2 3 5 6 drain drain drain gate drain source
ntgs3433t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted)* characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0 vdc, i d = 10 m a) v (br)dss 12 vdc zero gate voltage drain current (v gs = 0 vdc, v ds = 8 vdc, t j = 25 c) (v gs = 0 vdc, v ds = 8 vdc, t j = 70 c) i dss 1.0 5.0 m adc gatebody leakage current (v gs = 8.0 vdc, v ds = 0 vdc) i gss 100 nadc gatebody leakage current (v gs = +8.0 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = 250 m adc) v gs(th) 0.50 0.70 1.50 vdc static drainsource onstate resistance (v gs = 4.5 vdc, i d = 3.3 adc) (v gs = 2.5 vdc, i d = 2.9 adc) r ds(on) 0.055 0.075 0.075 0.095 forward transconductance (v ds = 10 vdc, i d = 3.3 adc) g fs 7.0 mhos dynamic characteristics total gate charge (v 10 vd v 4 5 vd q tot 7.0 15 nc gatesource charge (v ds = 10 vdc, v gs = 4.5 vdc, i d = 3.3 adc ) q gs 2.0 gatedrain charge i d = 3 . 3 adc) q gd 3.5 input capacitance (v 50vd v 0vd c iss 550 pf output capacitance (v ds = 5.0 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 450 reverse transfer capacitance f = 1 . 0 mhz) c rss 200 switching characteristics turnon delay time t d(on) 20 30 ns rise time (v dd = 10 vdc, i d = 1.0 adc, t r 20 30 turnoff delay time (v dd 10 vdc , i d 1 . 0 adc , v gs = 4.5 vdc, r g = 6.0 ) t d(off) 110 120 fall time t f 100 115 reverse recovery time (i s = 1.7 adc, dl s /dt = 100 a/ m s) t rr 30 ns bodydrain diode ratings diode forward onvoltage (i s = 1.7 adc, v gs = 0 vdc) v sd 0.80 1.5 vdc diode forward onvoltage (i s = 3.3 adc, v gs = 0 vdc) v sd 0.90 vdc *indicates pulse test: p.w. = 300 m sec max, duty cycle = 2%. *class 1 esd rated handling precautions to protect against electrostatic discharge is mandatory.
ntgs3433t1 http://onsemi.com 3 figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance vs. gatetosource voltage figure 4. onresistance vs. drain current and gate voltage figure 5. onresistance variation with temperature figure 6. capacitance variation 0 6 1.5 10 1.75 1 0.5 v ds, draintosource voltage (volts) i d, drain current (amps) 2 0 0.25 12 v gs = 5 v v gs = 3 v v gs = 2.5 v v gs = 4.5 v v gs = 3.5 v v gs = 2 v v gs = 1.5 v t j = 25 c 10 0 16 6 20 v gs, gatetosource voltage (volts) i d, drain current (amps) 0.5 2.5 3.5 2 1.5 3 1 t j = 25 c t j = 125 c t j = 55 c v ds 10 v 0 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 2468 v gs, gatetosource voltage (volts) r ds(on), draintosource resistance ( w ) i d = 3.3 a t j = 25 c 0.15 i d, drain current (amps) r ds(on), draintosource resistance ( w ) 0810 6 412 214 0.05 0.2 0 0.1 0.25 0.3 20 t j = 25 c v gs = 2.5 v v gs = 4.5 v 1.6 1.4 1.2 1 t j , junction temperature ( c) r ds(on), draintosource resistance (normalized) 50 50 25 0 25 75 125 100 i d = 3.3 a v gs = 4.5 v 0.8 0.6 150 0 600 1000 1200 v ds, draintosource voltage (volts) c, capacitance (pf) 01020 7.5 5 2.5 v gs = 0 v t j = 25 c v gs = 4 v 8 4 0.75 1.25 18 14 12 8 4 2 4 16 18 12.5 15 17.5 800 400 200 c oss c rss c iss
ntgs3433t1 http://onsemi.com 4 1e04 1e+00 0.1 1e+01 1e01 1e02 square wave pulse duration (sec) 0.1 1 1e03 duty cycle = 0.5 1e+02 1e+03 normalized effective transient thermal impedance 0.2 single pulse 0.1 0.05 0.02 0.01 6 4 3 2 1 0 q g, total gate charge (nc) 04 2610 t j = 25 c i d = 3.3 a qt q gs q gd v gs, gatetosource voltage (volts) 5 8 figure 7. gatetosource and draintosource voltage vs. total charge figure 8. diode forward voltage vs. current 0 10 8 0.8 6 3 1 0.6 0.4 1.2 v sd, sourcetodrain voltage (volts) i s , source current (amps) 2 1 0 0.2 t j = 150 c figure 9. normalized thermal transient impedance, junctiontoambient 0.01 20 16 12 8 100.00 10.00 1.00 time (sec) power (w) 4 0 0.10 figure 10. single pulse power 4 5 7 9 t j = 25 c v gs = 0 v
ntgs3433t1 http://onsemi.com 5 package dimensions style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max inches millimeters a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0610 1.25 1.55 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. m j k tsop6 case 318g02 issue g
ntgs3433t1 http://onsemi.com 6 notes
ntgs3433t1 http://onsemi.com 7 notes
ntgs3433t1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntgs3433t1/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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